1 - 4 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c2a i dm t c = 25 c, pulse width limited by t jm 8a p d t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. weight 4 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s high voltage mosfet n-channel enhancement mode ixta 2n100 ixtp 2n100 g = gate, d = drain, s = source, tab = drain d (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 250 a 2 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 ? v dss t j = 25 c 200 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 7.0 ? pulse test, t 300 s, duty cycle d 2 % 97540a(5/98) g d s to-220ab (ixtp) v dss = 1000 v i d25 = 2 a r ds(on) = 7 ? ? ? ? ? to-263 aa (ixta) features international standard packages low r ds (on) hdmos tm process rugged polysilicon gate cell structure low package inductance (< 5 nh) - easy to drive and to protect fast switching times applications switch-mode and resonant-mode power supplies flyback inverters dc choppers advantages space savings high power density ixys reserves the right to change limits, test conditions, and dimensions. g s d (tab)
2 - 4 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 1.5 2.2 s c iss 825 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 58 pf c rss 15 pf t d(on) 15 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 15 35 ns t d(off) r g = 20 ?, (external) 60 80 ns t f 30 55 ns q g(on) 40 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 10 nc q gd 15 nc r thjc 1.25 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 2 a i sm repetitive; pulse width limited by t jm 8a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v 1000 ns ixta2n100 IXTP2N100 to-220 ab outline dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 1. gate 2. collector 3. emitter 4. collector botton side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 smd outline pins: 1 - gate 2 - collector 3 - emitter 4 - collector bottom side ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved t - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0.0 0.5 1.0 1.5 2.0 2.5 v ds - volts 0 5 10 15 20 25 30 i d - amperes 0 1 2 3 v volts 0246810 i d - amperes 0.0 0.5 1.0 1.5 2.0 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 0 1 2 3 4 i d = 1 a i d - amperes 01234 r ds(on) - normalized 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v ds - volts 0 5 10 15 20 25 30 i d - amperes 0 1 2 3 4 5v v gs = 10v v gs =10v 9v 8v 7v t j =125 o c v gs =10v t j =25 o c 6v 5v t j = 25 o c i d = 2 a t j = 25 o c t j = 125 o c v gs =10v 9v 8v 7v 6v t j = 125 o c figure 2. output characteristics at 125 o c figure 1. output characteristics at 25 o c figure 5. drain current vs. case temperature figure 6. admittance curves figure 3. r ds(on) normalized to 0.5 i d25 value figure 4. r ds(on) normalized to 0.5 i d25 value ixta2n100 IXTP2N100
4 - 4 ? 2000 ixys all rights reserved v ds - volts 1 1 0 1 00 1 000 i d - amperes 0. 01 0. 1 1 10 100 v ds - volts 0 10203040 capacitance - pf 1 10 100 1000 10000 v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 i d - amperes 0 1 2 3 4 5 gate charge - nc 0 10203040 v gs - volts 0 2 4 6 8 10 12 crss coss ciss vds= 500v i d = 1a i g = 1ma f = 1mhz 2 t c = 25 o c 10 ms 1 ms 100 ms dc t j = 125 o c t j = 25 o c pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc (k/w) 0.001 0.01 0.1 1 d=0.5 d=0.1 d=0.05 d=0.01 single pulse d = duty cycle d=0.2 d=0.02 figure 8. capacitance curves figure 7. gate charge figure 9. source current vs. source to drain voltage figure 11. transient thermal resistance figure10. forward bias safe operating area ixta2n100 IXTP2N100
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